The goal of this SEED is to study charge and spin transport at high quality complex oxide interfaces grown using molecular beam epitaxy (MBE). With the aim to bring oxide electronic/spintronic devices a step closer to reality, we will investigate thin films and heterostructures to understand how transport and magnetism at ferromagnetic metallic oxide/non-magnetic oxide interfaces is influenced by defects, strain and dimensionality as important steps towards room temperature electronic, magnetoresistive and spin injection devices. For the proposed work, we have selected a pair of nearly lattice-matched and structurally similar model materials, LSMO and Nb-doped SrTiO3. In addition to building and studying devices from conventional films we will also emphasize low dimensional structures, for which SrTiO3 is ideally suited. We have selected SrTiO/SrTi0.8Zr0.2O3 as an ideal system for this as: (i) these are structurally and chemically similar materials and are thus amenable to minimization of interfacial defects, (ii) they form a complete solid solution thus offering the capability to tailor the band gap via composition, and (iii) the band gap of SrTiO3(3.2 eV) and SrZrO3 (5.6 eV) are very different, enabling band gap engineering. This will provide a means to synthesize high mobility 2DEGs, similar to highly successful semiconductor systems such as GaAs/AlGaAs.
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